首页 |元器件品牌

MMBTA55 [BL Galaxy Electrical]

PNP General Purpose Transistor; PNP通用晶体管
MMBTA55
型号： MMBTA55
厂家： BL Galaxy Electrical    BL Galaxy Electrical
描述：

PNP General Purpose Transistor
PNP通用晶体管

晶体 晶体管 光电二极管
文件： 总3页 (文件大小：144K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
BL Galaxy Electrical  
Production specification  
PNP General Purpose Transistor  
MMBTA55/A56  
FEATURES  
Pb  
Lead-free  
z
Epitaxial planar die construction.  
Complementary NPN types available  
(MMBTA05/MMBTA06)  
z
APPLICATIONS  
z
Ideal for medium NPN amplification and switching.  
SOT-23  
ORDERING INFORMATION  
Type No.  
Marking  
Package Code  
MMBTA55  
MMBTA56  
2H  
2GM  
SOT-23  
SOT-23  
MAXIMUM RATING @ Ta=25℃ unless otherwise specified  
Symbol  
Parameter  
MMBTA55  
MMBTA56  
-80  
UNIT  
VCBO  
collector-base voltage  
-60  
V
VCEO  
VEBO  
IC  
collector-emitter voltage  
-60  
-80  
V
emitter-base voltage  
-4  
-0.5  
V
collector current (DC)  
A
PC  
Collector dissipation  
0.35  
W
RθJA  
Tj ,Tstg  
Thermal Resistance, Junction to Ambient  
junction and storage temperature  
357  
°C/W  
°C  
-55-150  
Document number: BL/SSSTC123  
Rev.A  
www.galaxycn.com  
1
BL Galaxy Electrical  
Production specification  
PNP General Purpose Transistor  
MMBTA55/A56  
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
Symbol Parameter  
Test conditions  
MIN. MAX. UNIT  
Collector-base breakdown voltage  
V(BR)CBO  
MMBTA55  
MMBTA56  
IC=-100μA,IE=0  
-60  
-80  
V
V
Collector-emitter breakdown voltage  
MMBTA55  
V(BR)CEO  
IC=-10mA,IB=0  
-80  
-80  
MMBTA56  
V(BR)EBO Emitter-base breakdown voltage  
IE=-100μA,IC=0  
-4  
-
V
collector cut-off current  
collector cut-off current  
MMBTA55 IE = 0; VCB = -60V  
MMBTA56 IE = 0; VCB = -80V  
ICBO  
ICEO  
hFE  
-0.1  
-0.1  
μA  
μA  
MMBTA55 IB = 0; VCB = -60V  
MMBTA56 IB= 0; VCB = -80V  
-
V
V
CE = -1V;IC = -10mA  
CE = -1V;IC = -100mA  
100  
100  
-
-
DC current gain  
VCE(sat)  
VBE(sat)  
fT  
collector-emitter saturation voltage  
base-emitter saturation voltage  
transition frequency  
IC = -100mA; IB = -10mA  
IC = -100mA; VCE = -1.0V  
-
-
-0.25  
-1.2  
-
V
V
IC = -100mA; VCE = -1V;  
f = 100MHz  
50  
MHz  
PACKAGE OUTLINE  
Plastic surface mounted package  
SOT-23  
A
SOT-23  
Dim  
A
Min  
2.85  
1.25  
Max  
E
2.95  
1.35  
K
B
B
C
D
E
1.0Typical  
0.37  
0.43  
0.48  
1.95  
0.1  
J
D
0.35  
1.85  
0.02  
G
G
H
J
H
0.1Typical  
C
K
2.35  
2.45  
All Dimensions in mm  
Document number: BL/SSSTC123  
Rev.A  
www.galaxycn.com  
2
BL Galaxy Electrical  
Production specification  
PNP General Purpose Transistor  
MMBTA55/A56  
SOLDERING FOOTPRINT  
Unit : mm  
PACKAGE INFORMATION  
Device  
Package  
Shipping  
MMBTA55/MMBTA56 SOT-23  
3000/Tape&Reel  
Document number: BL/SSSTC123  
Rev.A  
www.galaxycn.com  
3

相关型号：

MMBTA55-13

 Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
DIODES

MMBTA55-7

 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DIODES

MMBTA55-7-F

 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DIODES

MMBTA55-AU

 NPN AND PNP HIGH VOLTAGE TRANSISTOR
PANJIT

MMBTA55-TP

 PNP General Purpose Amplifier
MCC

MMBTA55-TP-HF

 Small Signal Bipolar Transistor, 0.5A I(C), PNP,
MCC

MMBTA55G-AE3-R

 PNP MMBTA55
UTC

MMBTA55G-AL3-R

 Small Signal Bipolar Transistor
UTC

MMBTA55L-AE3-R

 PNP MMBTA55
UTC

MMBTA55L-AL3-R

 PNP MMBTA55
UTC

MMBTA55L99Z

 PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
TI

MMBTA55LT1

 Driver Transistors
MOTOROLA
©2020 ICPDF网 联系我们和版权申明